v rrm = 50 v - 600 v i f =60 a features ? high surge capability do-5 package ? types up to 600 v v rrm parameter symbol 1n2133a (r) 1n2135a (r) unit re p etitive p eak reverse volta g e v rrm 300 400 v 1n2133a thru 1N2138AR 1n2138a (r) 500 1n2137a (r) maximum ratings, at t j = 25 c, unless otherwise specified silicon standard recover y diode conditions 600 pp g rms reverse voltage v rms 210 280 v dc blocking voltage v dc 50 100 v continuous forward current i f 60 60 a operating temperature t j -65 to 200 -65 to 200 c storage temperature t stg -65 to 200 -65 to 200 c parameter symbol 1n2133a (r) 1n2135a (r) unit diode forward voltage 1.1 1.1 10 10 a 15 15 ma thermal characteristics thermal resistance, junction - case r thjc 0.65 0.65 c/w 15 a 1050 reverse current i r v f 1050 v r = 50 v, t j = 25 c i f = 60 a, t j = 25 c t c 150 c conditions 350 1050 1050 -65 to 200 60 60 -65 to 200 1n2138a (r) 10 10 1n2137a (r) 0.65 v r = 50 v, t j = 150 c 0.65 1.1 1.1 15 v electrical characteristics, at tj = 25 c, unless otherwise specified -65 to 200 -65 to 200 t c = 25 c, t p = 8.3 ms 420 200 150 surge non-repetitive forward current, half sine wave i f,sm www.genesicsemi.com 1
1n2133a thru 1N2138AR www.genesicsemi.com 2
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